공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-19
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2014-06-20
LTD Date2014-12-20
관련 부품
InfineonIRF6711STR1PBF
Power Field-Effect Transistor, 84A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRLR8256PBF
MOSFET N-CH 25V 81A DPAK N-Channel 25 V 81A (Tc) 63W (Tc) Surface Mount TO-252AA (DPAK)
InfineonIRFH7934TR2PBF
MOSFET N-CH 30V 24A 5X6 PQFN "N-Channel 30 V 24A (Ta), 76A (Tc) Surface Mount 8-PQFN (5x6)"
STMicroelectronicsSTD75N3LLH6
N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
설명
유통업체에서 제공한 Infineon IRF6712STR1PBF에 대한 설명입니다.
Trans MOSFET N-CH 25V 17A 6-Pin Direct-FET SQ T/R
DIRECTFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 25V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 17 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):6.7mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:SQ ;RoHS Compliant: Yes
MOSFET, N, DIRECTFET, 25V, SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:25V; On Resistance Rds(on):3.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Transistor Case Style:SQ; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Base Number:6712; Current Id Max:17A; Package / Case:SQ; Power Dissipation Pd:2.2mW; Pulse Current Idm:130A; SMD Marking:2.2; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins5
Number of Terminals2
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4.9 mΩ
Drain to Source Voltage (Vds)25 V
Dual Supply Voltage25 V
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.57 nF
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Nominal Vgs1.9 V
Number of Elements1
Rds On Max4.9 mΩ
Recovery Time26 ns
Resistance4.9 MΩ
Rise Time40 ns
TerminationSMD/SMT
Threshold Voltage1.9 V
Turn-Off Delay Time14 ns
Turn-On Delay Time11 ns
Dimensions
Height506 µm
Length4.826 mm
Width3.95 mm