가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6621TR1PBF | 0 | 1K | Bulk | 2d | |||||||
| Farnell | IRF6621TR1PBF | 0 | 1 | 1d | ||||||||
| Win Source | WS-IRF6621TR1PBF | 16,000 | 115 | 4h | ||||||||
| Worldway Electronics | IRF6621TR1PBF | 10,299 | 7 | Tape & Reel | 3h | |||||||
| Aztech | IRF6621TR1PBF | 6,145 | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-06
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF6721STR1PBF
Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon IRF6621TR1PBF에 대한 설명입니다.
Trans MOSFET N-CH Si 30V 12A 6-Pin Direct-FET SQ T/R / MOSFET N-CH 30V 12A DIRECTFET
30V SINGLE N-CHANNEL HEXFET POWER MOSFET, DIRECTFET SQ PKG
N CH MOSFET, 30V, 9.6A DIRECTFET SQ
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:9.6A; On Resistance, Rds(on):9.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET SQ ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins5
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.1 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time4.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.46 nF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation42 W
Rds On Max9.1 mΩ
Rise Time14 ns
Threshold Voltage1.8 V
Turn-Off Delay Time16 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)20 V
Dimensions
Height506 µm
Length4.826 mm
Width3.95 mm