설명
유통업체에서 제공한 Infineon IRF640PBF에 대한 설명입니다.
N-channel MOSFET, 200V, 18A, TO-220, IR
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
MOSFET TRANSISTOR N CH; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipati
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기술 사양
Physical
Case/PackageTO-220
Number of Terminals3
Technical
Continuous Drain Current (ID)18 A
Current Rating18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vds)200 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage200 V
Number of Elements1
PackagingBulk
Power Dissipation125 W
Voltage Rating (DC)200 V