공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2016-01-06
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2025-09-30
LTD Date2026-03-31
관련 부품
InfineonIRFI3205PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 64A;TO-220 Full-Pak;PD 63W;-55de
STMicroelectronicsSTF100N6F7
N-channel 60 V, 4.6 mOhm typ., 46 A STripFET F7 Power MOSFET in a TO-220FP package
설명
유통업체에서 제공한 Infineon IRF60B217에 대한 설명입니다.
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor MOSFET N-CH 60V 60A 3-Pin TO-220 Tube
Single N-Channel 60 V 9 mOhm 44 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-220AB Full-Pak Tube
TRENCH 40<-<100V / N-Channel 60 V 60A (Tc) 83W (Tc) Through Hole PG-TO220-3-1
Power Field-Effect Transistor, 60A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 60V, 60A, To-220Ab; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0073Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Power Rohs Compliant: Yes |Infineon IRF60B217
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)60 A
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.23 nF
Max Operating Temperature175 °C
Max Power Dissipation83 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity1000
Power Dissipation83 W
Rds On Max9 mΩ
Schedule B8541290080