공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-06-23
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonIRF5210PBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-220AB;PD 200W;VGS +/-20
InfineonIRF3415PBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V
VishaySIR422DP-T1-GE3
Trans MOSFET N-CH 40V 40A 8-Pin PowerPAK SO T/R / MOSFET N-CH 40V 40A PPAK SO-8
설명
유통업체에서 제공한 Infineon IRF5M5210SCX에 대한 설명입니다.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
HEXFET, HiRel, Gen 5, QIRL TO-254 EAR99 -100V, 34A, 0.07 ohm Screening Level=TX
Trans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA TX Level Screening
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package, TO-254AA-3
Infineon SCT
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)34 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)-100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance100 mΩ
PackagingBulk
Power Dissipation125 W
Turn-Off Delay Time100 ns
Turn-On Delay Time28 ns
Dimensions
Height21.16 mm