가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF5803D2TRPBF | 0 | 4K | Bulk | 8h | |||||||
| Farnell | IRF5803D2TRPBF | 0 | 1 | Cut Tape | 7h | |||||||
| Component Stockers USA | IRF5803D2TRPBF | 23,303 | >1wk | |||||||||
| Win Source | WS-IRF5803D2TRPBF | 14,000 | 35 | 20h | ||||||||
| Worldway Electronics | IRF5803D2TRPBF | 5,801 | 7 | Tape & Reel | 2d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-12-04
LTD Date2016-03-04
관련 부품
InfineonIRF7103PBF
Transistor: 2xN-MOSFET; unipolar; 50V; 3A; 0.13ohm; 2W; -55+150 deg.C; SMD; SO8
InfineonIRF7306PBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
InfineonIRF7306TRPBF
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
STMicroelectronicsSTS4DPF30L
Dual Mosfet, Dual P Channel, -4 A, -30 V, 0.07 Ohm, 10 V, 1 V Rohs Compliant: Yes
설명
유통업체에서 제공한 Infineon IRF5803D2TRPBF에 대한 설명입니다.
Trans MOSFET P-CH Si 40V 3.4A 8-Pin SOIC T/R / MOSFET P-CH 40V 3.4A 8-SOIC
-40V FETKY - MOSFET and Schottky Diode in a SO-8 package
Power Field-Effect Transistor, 3.4A I(D), 40V, 0.112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, P CH, 40V, 3.4A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:40V; On Resistance Rds(on):112mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-3.4A; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:27A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)3.4 A
Drain to Source Breakdown Voltage-40 V
Drain to Source Resistance112 mΩ
Drain to Source Voltage (Vdss)-40 V
Dual Supply Voltage40 V
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.11 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2 W
Rds On Max112 mΩ
Rise Time550 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time88 ns
Turn-On Delay Time43 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책