공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-18
Lifecycle StatusObsolete (Last Updated: 9 months ago)
설명
유통업체에서 제공한 Infineon IRF520VPBF에 대한 설명입니다.
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
MOSFET, 100V, 9.6A, 165 MOHM, 14.7 NC QG, TO-220AB
Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 9.6A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:9.6A; On State Resistance:0.165ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:37A; Junction to Case Thermal Resistance A:3.4°C/W; On state resistance @ Vgs = 10V:165ohm; Power Dissipation:44W; Power Dissipation Pd:44W; Voltage, Vds Max:100V; Transistor Case Style:TO-220AB
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기술 사양
Physical
Case/PackageTO-220AB
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9.6 A
Current Rating9.6 A
Drain to Source Resistance165 mΩ
Drain to Source Voltage (Vds)100 V
Dual Supply Voltage100 V
Max Operating Temperature175 °C
Max Power Dissipation44 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingBulk
Resistance165 Ω
Rise Time23 ns
Voltage Rating (DC)100 V