Infineon IRF460

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Power Field-Effect Transistor, 21A I(D), 500V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE

500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package, TO-204AE-2

Trans MOSFET N-CH 500V 21A 3-Pin (2+Tab) TO-204AE

IRF460 Seris 500 V 0.27 Ohm 21 A N-Channel Hexfet®Transistor - TO-3

IC CURR SENSE 1 CIRCUIT SOT23-5

MOSFET, N, TO-3; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:500V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:1200mJ; Current Iar:21A; Current Id Max:21A; Current Temperature:25°C; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:84A; Repetitive Avalanche Energy Max:30mJ; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:11.5g