Infineon IRF1010NPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;TO-220AB;PD 180W;gFS 32S

Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Transistor MOSFET N-Ch. 84A/55V TO220 IRF 1010 N PBF

Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 180 W

Power Field-Effect Transistor, 85A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

MOSFET, N, 55V, 72A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:115W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:85A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:11mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:115W; Power Dissipation Pd:115W; Pulse Current Idm:270A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V