EiceDRIVER™ 600 V half-bridge gate driver IC with typical 1.9 A source and 2.3 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.For the new version with our SOI technology we recommend 2ED2183S06F, providing integrated bootstrap diode, better robustness and higher switching frequency
The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
DRIVER, MOSFET, HIGH/LOW SIDE, 2183; Device Type:MOSFET; Module Configuration:High Side / Low Side; Peak Output Current:2.3A; Input Delay:180ns; Output Delay:220ns; Supply Voltage Range:10V to 20V; Driver Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-40°C to +125°C; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Base Number:2183; IC Generic Number:2183; Logic Function Number:2183; No. of Outputs:2; Offset Voltage:600V; Operating Temperature Max:125°C; Operating Temperature Min:-40°C; Output Current:210mA; Output Current + Max:1700mA; Output Sink Current Min:1700mA; Output Source Current Min:1700mA; Output Voltage:620V; Output Voltage Max:20V; Output Voltage Min:10V; Package / Case:SOIC; Power Dissipation Pd:0.625W; Supply Voltage Max:20V; Supply Voltage Min:10V; Termination Type:SMD; Voltage Vcc Max:25V; Voltage Vcc Min:10V