Infineon IR21064PBF

600 V high-side and low-side gate driver IC with separate pin for logic ground, PDIP14, RoHS

Tube IR21064 High-Side or Low-Side 1996 gate driver 150ns 50ns -40C~150C TJ 200mA 350mA 0.8V 2.9V

HIGH AND LOW SIDE DRIVER Half Bridge Based MOSFET Driver, 0.35A, CMOS, PDIP14

150ns 2 10V 300ns 20V 800mV,2.9V Non-Inverting IGBT,MOSFET,N 50ns , 200mA,350mA DIP-14 4.4mm

High and Low Side Driver, SoftTurn-On, Noninverting Inputs, All High Voltage Pins on One Side, Separate Logic and Power Ground in a 14-Lead package

MOSFET Driver IC; MOSFET Driver Type:Dual Drivers, Low & High Side; High Side MOSFET Drive Type:Bootstrapped; Load Voltage Max:600V; Peak Output High Current, Ioh:250mA; Rise Time:150ns; Fall Time:50ns; Load Capacitance:1000pF RoHS Compliant: No

The IR2106(4)(S) are high voltage,high speed power MOSFET and IGBT drivers with independent highand low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output,down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

600 V High and Low Side Driver IC with typical 0.2 A source and 0.35 A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP. | Summary of Features: Floating channel designed for bootstrap operation; Fully operational to +600 V; Tolerant to negative transient voltage; dV/dt immune; Gate drive supply range from 10 to 20 V; Undervoltage lockout for both channels; 3.3 V, 5 V, and 15 V logic input compatible; Matched propagation delay for both channels; Logic and power ground + /- 5 V offset; Lower di/dt gate driver for better noise immunity; Outputs in phase with inputs