공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2020-10-27
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
설명
유통업체에서 제공한 Infineon IPZA65R018CFD7XKSA1에 대한 설명입니다.
Transistor MOSFET N-Channel 650V 106A 4-Pin PG-TO-247 Tube
Power Field-Effect Transistor, 106A I(D), 650V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Infineon NChannelMOSTube CoolMOSseries, Vds=700 V, 106 A, TO-247-4encapsulation, Through hole mounting, 4Pin
Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPZA65R018CFD7 in TO-247 4-pin package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.
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기술 사양
Physical
Case/PackageTO-247
Contact PlatingTin
Number of Terminals4
Technical
Continuous Drain Current (ID)106 A
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vds)650 V
Max Operating Temperature150 °C
Max Power Dissipation446 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1