공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-06-07
Lifecycle StatusEOL (Last Updated: 4 months ago)
LTB Date2023-08-31
LTD Date2024-02-29
관련 부품
InfineonIPW65R310CFDFKSA1
MOSFET N-CH 650V 11.4A TO247-3 N-Channel 650 V 11.4A (Tc) 104.2W (Tc) Through Hole PG-TO247-3-1
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MOSFET N-CH 700V 6A TO247-3 N-Channel 700 V 6A (Tc) 62.5W (Tc) Through Hole PG-TO247-3-1
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N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-247 package
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MOSFET N-CH 500V 12A TO247-3 / N-Channel 500 V 12A (Tc) 100W (Tc) Through Hole TO-247-3
STMicroelectronicsSTW18N60DM2
N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-247 package
설명
유통업체에서 제공한 Infineon IPW65R420CFDFKSA1에 대한 설명입니다.
MOSFET N-CH 650V 8.7A TO247-3 N-Channel 650 V 8.7A (Tc) 83.3W (Tc) Through Hole PG-TO247-3-1
Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
83.3W(Tc) 20V 4.5V@ 340µA 32nC@ 10 V 1individualNChannel 650V 420mΩ@ 3.4A,10V 8.7A 870pF@100V TO-247 Through hole mounting
Mosfet, N-Ch, 650V, 8.7A, To-247; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.378Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IPW65R420CFDFKSA1
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)8.7 A
Drain to Source Resistance420 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance870 pF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation83.3 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance420 mΩ
Package Quantity240
Power Dissipation83.3 W
Rds On Max420 mΩ
Rise Time7 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time10 ns