Infineon IPW65R029CFD7XKSA1

Mosfet, N-Ch, 650V, 69A, To-247 Rohs Compliant: Yes |Infineon Technologies IPW65R029CFD7XKSA1

Power MOSFET, N Channel, 650 V, 69 A, 0.024 ohm, TO-247, Through Hole

Trans MOSFET N-CH 650V 69A 3-Pin TO-247 Tube

Power Field-Effect Transistor, 69A I(D), 650V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

INFINEON MOSFET IPW65R029CFD7XKSA1

MOS, Vds=700 V, 304 A, PG-TO247-3

Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPW65R029CFD7 in TO-247 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.