공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-06-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIPW60R160P6FKSA1
Power MOSFET, N Channel, 600 V, 23.8 A, 160 mOhm, TO-247, 3 Pins, Through Hole
InfineonIPW60R230P6FKSA1
MOSFET N-CH 600V 16.8A TO247-3 / N-Channel 600 V 16.8A (Tc) 126W (Tc) Through Hole PG-TO247-3
STMicroelectronicsSTW33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-247 package
STMicroelectronicsSTW28N60M2
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package
STMicroelectronicsSTW24N60M2
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-247 package
설명
유통업체에서 제공한 Infineon IPW60R190P6FKSA1에 대한 설명입니다.
N-Channel 600 V 20.2 A 190 mO 37 nC CoolMOS P6 Power Transistor - TO-247
Power MOSFET, N Channel, 600 V, 20.2 A, 0.171 ohm, TO-247, Through Hole
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
MOSFET, N-CH, 600V, 20.2A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.171ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20.2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Max Dual Supply Voltage600 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance190 mΩ
Package Quantity240
Power Dissipation151 W
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Dimensions
Height25.4 mm