공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-06
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2026-09-30
LTD Date2027-03-31
관련 부품
InfineonIPW60R165CPFKSA1
MOSFET N-CH 600V 21A TO-247 / Trans MOSFET N-CH 650V 21A 3-Pin(3+Tab) TO-247 Tube
InfineonIPW60R160P6FKSA1
Power MOSFET, N Channel, 600 V, 23.8 A, 160 mOhm, TO-247, 3 Pins, Through Hole
STMicroelectronicsSTW33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-247 package
STMicroelectronicsSTW28N60M2
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package
STMicroelectronicsSTW24N60M2
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-247 package
설명
유통업체에서 제공한 Infineon IPW60R190E6FKSA1에 대한 설명입니다.
Trans MOSFET N-CH 650V 20.2A 3-Pin(3+Tab) TO-247 Tube
Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO247-3, RoHS
Infineon SCT
Mosfet, N-Ch, 600V, 20.2A, To-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPW60R190E6FKSA1
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.600V CoolMOS™ E6 is replacement for 600V CoolMOS™ C3650V CoolMOS™ E6 is replacement for 650V CoolMOS™ C3
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)20.2 A
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation151 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance190 mΩ
Package Quantity240
Power Dissipation151 W
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time90 ns
Turn-On Delay Time12 ns