공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-02-17
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Infineon IPW60R180P7XKSA1에 대한 설명입니다.
Transistor MOSFET N-CH 600V 18A 3-Pin TO-247 Tube
Mosfet, N-Ch, 600V, 18A, To-247; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon Technologies IPW60R180P7XKSA1
The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
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기술 사양
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance180 mΩ
Package Quantity240
Power Dissipation72 W
Schedule B8541290080
Turn-Off Delay Time85 ns
Turn-On Delay Time14 ns
Dimensions
Height25.4 mm