Infineon IPU60R2K1CEAKMA1

N-Channel 600 V 2.3 A 2100 mO 6.7 nC CoolMOS CE Power Transistor - IPAK, PG-TO251-3, RoHS

Trans MOSFET N-CH 600V 3.7A 3-Pin(3+Tab) TO-251 Tube

22KW 20V 3.5V 6.7nC@ 10V 600V 2.1¦¸@ 10V 140pF@ 100V TO-251 6.22mm

Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Infineon MOSFET IPU60R2K1CEAKMA1

600VCoolMOS CE Power Transistor

IPU60R2K1 - 600V COOLMOS N-CHANNEL POWER;

IC AMP GENERAL PURPOSE 8CERDIP

Very high commutation ruggedness

Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV