Infineon IPU60R1K5CEAKMA2

Single N-Channel 650 V 1.5 Ohm 9.4 nC CoolMOS Power Mosfet - TO-251, PG-TO251-3, RoHS
$ 0.227
NRND

가격 및 재고

데이터시트 및 문서

Infineon IPU60R1K5CEAKMA2에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet14 페이지0년 전

재고 내역

3개월간의 트렌드:
+63.48%

공급망

Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-09-25
Lifecycle StatusNRND (Last Updated: 1 week ago)

관련 부품

MOSFET N-CH 700V 5.4A TO251 / N-Channel 700 V 5.4A (Tc) 53W (Tc) Through Hole PG-TO251-3-11
STMicroelectronicsSTD1NK60-1
STD1NK60-1 N-CHANNEL MOSFET TRANSISTOR, 1 A, 600 V, 3-PIN TO-252
Power Field-Effect Transistor, 2.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
P-MOSFET transistor FDMC6679AZ Fairchild; -30V; -20A; 10mOhm; SMD MLP 3.3x3.3

설명

유통업체에서 제공한 Infineon IPU60R1K5CEAKMA2에 대한 설명입니다.

Single N-Channel 650 V 1.5 Ohm 9.4 nC CoolMOS Power Mosfet - TO-251, PG-TO251-3, RoHS
Infineon SCT
Trans MOSFET N-CH 650V 5A 3-Pin(3+Tab) TO-251 Tube
Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Infineon MOSFET IPU60R1K5CEAKMA2
Compliant Surface Mount Contains Lead 1.5 Ω TO-251-3 Halogen Free Production (Last Updated: 2 years ago) 1500
Very high commutation ruggedness
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

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부품 번호 별칭

이 부품은 다음과 같은 대체 부품 번호로 알려져 있을 수 있습니다.

  • IPU60R1K5CE
  • SP001396898