Infineon IPT029N08N5ATMA1

Mosfet, N-Ch, 80V, 169A, Hsof Rohs Compliant: Yes |Infineon Technologies IPT029N08N5ATMA1

168W(Tc) 20V 3.8V@ 108¦ÌA 87nC@ 10 V 1N 80V 2.9m¦¸@ 150A,10V 169A 6.5nF@40V HSOF-8

MOSFET N-CH 80V 52A/169A HSOF-8 / N-Channel 80 V 52A (Ta), 169A (Tc) 168W (Tc) Surface Mount PG-HSOF-8-1

Trans MOSFET N-CH 80V 52A 9-Pin(8+Tab) HSOF T/R

Power Transistor 80V OPTIMOS-5, PG-HSOF-8, RoHS

Power Field-Effect Transistor, 169A I(D), 80V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

场效应管, MOSFET, N沟道, 80V, 169A, PG-HSOF;

MOSFET N-CH 80V 52A/169A HSOF-8

IPT029N08N - OPTIMOS POWER MOSFE

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.