유통업체에서 제공한 Infineon IPT026N10N5ATMA1에 대한 설명입니다.
Power MOSFET, N Channel, 100 V, 202 A, 0.0022 ohm, HSOF, Surface Mount
Trans MOSFET N-CH 100V 27A 9-Pin(8+Tab) HSOF T/R
Mosfet, N-Ch, 100V, 202A, 175Deg C, 214W Rohs Compliant: Yes |Infineon Technologies IPT026N10N5ATMA1
Infineon NMOS, Vds=100 V, 202 A, D2PAK £¨TO-263
Power Field-Effect Transistor, 202A I(D), 100V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 100V 27A/202A 8HSOF
100V, 202A, 2.6mOhm, N-Channel, HSOF-8
Infineon’s OptiMOS™ 5 100V n-channel power MOSFET IPT026N10N5 in TO-Leadless (TOLL) package is ideally suited for high switching frequencies. This package is especially designed for high current applications such as POL (point-of-load), forklift, light electric vehicles (LEV) and telecom power supply. With a 60% space reduction compared to D2PAK 7pin package, TOLL is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.