Infineon IPT017N10NF2SATMA1
$ 1.742
Production
가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IPT017N10NF2SATMA1 | 1,646 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IPT017N10NF2SATMA1 | 300 | 1 | |||||||||
| Future Electronics | IPT017N10NF2SATMA1 | 1,800 | 1800 | Tape & Reel | ||||||||
| Rutronik | STDMOS1490 | 10,820 | 1800 | 13h | ||||||||
| Rochester Electronics | IPT017N10NF2SATMA1 | 1,153 | 6h |
공급망
Country of OriginAustria, Germany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2022-08-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Infineon IPT017N10NF2SATMA1에 대한 설명입니다.
Mosfet, N-Ch, 100V, 294A, Hsof Rohs Compliant: Yes |Infineon Technologies IPT017N10NF2SATMA1
Power MOSFET, N Channel, 100 V, 294 A, 0.0016 ohm, HSOF, Surface Mount
Power Field-Effect Transistor, 294A I(D), 100V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 1.7 mOhm, addressing a broad range of applications from low- to high-switching frequency.
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