공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-08-31
LTD Date2015-02-28
관련 부품
onsemiNTD4815N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 35A 1.92W 21.4ns
onsemiNTD4815NH-35G
Tube Through Hole N-Channel Single Mosfet Transistor 6.9A Ta 35A Tc 35A 1.92W 17.6ns
onsemiNTD60N02R-1G
Tube Through Hole N-Channel Single Mosfet Transistor 8.5A Ta 32A Tc 32A 1.87W 33ns
설명
유통업체에서 제공한 Infineon IPS135N03L G에 대한 설명입니다.
Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251
Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, PLASTIC PACKAGE-3
MOSFET, N CH, 30A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Power Dissipation Pd:31W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
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기술 사양
Physical
Case/PackageTO-251-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1 nF
Max Operating Temperature175 °C
Max Power Dissipation31 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation31 W
Rds On Max13.5 mΩ
Rise Time3 ns
Turn-Off Delay Time12 ns
Turn-On Delay Time3 ns
Dimensions
Height2.41 mm
Length6.73 mm
Width6.22 mm