MOSFET, SMART SWITCH TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.8A; Drain Source Voltage Vds: 47V; On Resistance Rds(on): 0.13ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 1.5V; Power Di
The IPS021/IPS021S are fully protected three terminals Mart POWER MOSFETs that feature over-cur rent, over-temperature, ESD protection and drain to source active clamp. These devices combine a HEXFET (R) POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching time sand provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oCor when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capa-bility is significantly enhanced by the active clamp and covers most inductive load demagnetizations.