공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-12-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-15
LTD Date2025-09-15
관련 부품
InfineonIPP60R230P6XKSA1
N-Channel 600 V 16.8 A 230 mO 31 nC CoolMOS P6 Power Transistor - TO-220
STMicroelectronicsSTP18N65M5
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-220 package
STMicroelectronicsSTP20NM65N
N-channel 650V, 0.250 Ohm, 15 A, TO-220 second generation MDmesh(TM) Power MOSFET
STMicroelectronicsSTP15N65M5
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in TO-220 package
설명
유통업체에서 제공한 Infineon IPP65R190C7FKSA1에 대한 설명입니다.
Trans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 650V, 13A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.168ohm; Available until stocks are exhausted Alternative available
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.15 nF
Max Dual Supply Voltage650 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation72 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance190 mΩ
Package Quantity500
Power Dissipation72 W
Rds On Max190 mΩ
Schedule B8541290080
Turn-Off Delay Time54 ns
Turn-On Delay Time11 ns
Dimensions
Height20.7 mm