공급망
Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-05-18
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
설명
유통업체에서 제공한 Infineon IPP60R099P7XKSA1에 대한 설명입니다.
Transistor MOSFET N-Channel 650V 31A 3-Pin TO-220
Power MOSFET, N Channel, 600 V, 31 A, 0.077 ohm, TO-220, Through Hole
Optimized power MOSFETs merging high energy efficiency with ease-of-use, PG-TO220-3, RoHS
Infineon SCT
Mosfet, N-Ch, 600V, 31A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.077Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes |Infineon Technologies IPP60R099P7XKSA1
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
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기술 사양
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)31 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance99 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance99 mΩ
Package Quantity500
Power Dissipation117 W
Turn-Off Delay Time89 ns
Turn-On Delay Time23 ns
Dimensions
Height20.7 mm