공급망
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-03-07
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
관련 부품
STMicroelectronicsSTP34NM60N
N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-220 package
STMicroelectronicsSTP43N60DM2
N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package
STMicroelectronicsSTP38N65M5
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh m5 Power MOSFET in TO-220 package
InfineonIPP65R099C6XKSA1
MOSFET N-CH 650V 38A TO220-3 / N-Channel 650 V 38A (Tc) 278W (Tc) Through Hole PG-TO220-3
설명
유통업체에서 제공한 Infineon IPP60R099P6XKSA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
Mosfet, N-Ch, 600V, 37.9A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:37.9A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon Technologies IPP60R099P6XKSA1
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)37.9 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance99 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.33 nF
Max Dual Supply Voltage600 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation278 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance99 mΩ
Package Quantity500
Power Dissipation278 W
Rds On Max99 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage3.5 V
Turn-Off Delay Time50 ns
Turn-On Delay Time20 ns
Dimensions
Height20.7 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책