공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
관련 부품
STMicroelectronicsSTF14NM50N
N-channel 500 V, 0.28 Ohm, 12 A MDmesh(TM) II Power MOSFET in TO-220FP package
STMicroelectronicsSTF18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
설명
유통업체에서 제공한 Infineon IPP50R350CPXKSA1에 대한 설명입니다.
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220AB
10 A 500 V 0.35 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Power Field-Effect Transistor, 10A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:550V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:10A; Package / Case:TO-220; Power Dissipation Pd:89W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- LNFINEON
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- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance350 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage550 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.02 nF
Max Operating Temperature150 °C
Max Power Dissipation89 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance350 mΩ
Package Quantity500
Power Dissipation89 W
Rds On Max350 mΩ
Rise Time14 ns
TerminationThrough Hole
Threshold Voltage3 V
Turn-Off Delay Time80 ns
Turn-On Delay Time35 ns
Dimensions
Height15.95 mm
Length10.36 mm
Width4.57 mm