공급망
Country of OriginAustria, Germany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2020-12-18
Lifecycle StatusProduction (Last Updated: 1 week ago)
설명
유통업체에서 제공한 Infineon IPP129N10NF2SAKMA1에 대한 설명입니다.
Transistor Power MOSFET N-Channel 100V 52A 3-Pin TO-220 Tube
Mosfet, N-Ch, 100V, 52A, To-220 Rohs Compliant: Yes |Infineon Technologies IPP129N10NF2SAKMA1
StrongIRFET 2 Series 100V 52A 12.9mO N-Channel 71W Power Mosfet TO-220-3
Power Field-Effect Transistor, 52A I(D), 100V, 0.0129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 12.9 mOhm, addressing a broad range of applications from low- to high-switching frequency.Compared to the previous technology the IPP129N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
Number of Terminals3
Technical
Continuous Drain Current (ID)52 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance12.9 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation71 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.8 W
Turn-Off Delay Time13 ns
Turn-On Delay Time8.8 ns
Dimensions
Height19.86 mm