공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-08-31
LTD Date2015-02-28
관련 부품
InfineonIPP096N03LGHKSA1
N-CHANNEL POWER MOSFET / N-Channel 30 V 35A (Tc) 42W (Tc) Through Hole PG-TO220-3-1
설명
유통업체에서 제공한 Infineon IPP114N03LGHKSA1에 대한 설명입니다.
Trans MOSFET N-CH 30V 30A 3-Pin TO-220 Tube
Power Field-Effect Transistor, 30A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IPP114N03 POWER FIELD-EFFECT TRANSISTOR;
N-CHANNEL POWER MOSFET
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
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- INFI
- INFENION
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- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)30 A
Drain to Source Resistance11.4 mΩ
Fall Time2.4 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature175 °C
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation38 W
Rise Time3 ns
Turn-Off Delay Time15 ns
Turn-On Delay Time3.8 ns