Infineon IPP110N20N3GXKSA1

Power MOSFET, N Channel, 200 V, 88 A, 11 Milliohms, TO-220, 3 Pins, Through Hole

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

200V 88A 300W 11m´Î@10V88A 4V@270Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

88 A 200 V 0.011 ohm N-CHANNEL Si POWER MOSFET TO-220AB

OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N-CH, 200V, 88A, TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:88A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

Infineon's 200 V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48 V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 88 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 11 / Gate-Source Voltage V = 20 / Fall Time ns = 11 / Rise Time ns = 26 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300