공급망
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-04-29
Lifecycle StatusNRND (Last Updated: 1 month ago)
설명
유통업체에서 제공한 Infineon IPN60R1K0CEATMA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 6.8A 3-Pin(2+Tab) SOT-223 T/R
MOSFET, N-CH, 600V, 6.8A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.9ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer
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기술 사양
Physical
Case/PackageSOT-223
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5 W
Min Breakdown Voltage600 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance1 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation5 W
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time60 ns
Turn-On Delay Time10 ns
Dimensions
Height1.8 mm