공급망
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-06-13
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonIPN50R2K0CEATMA1
INFINEON IPN50R2K0CEATMA1 MOSFET Transistor, N Channel, 3.6 A, 500 V, 1.8 ohm, 13 V, 3 VNew
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MOSFET N-CH 650V 5.2A SOT223 / N-Channel 650 V 5.2A (Tc) 5W (Tc) Surface Mount PG-SOT223
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INFINEON IPN60R1K5CEATMA1 Power MOSFET, N Channel, 5 A, 600 V, 1.35 ohm, 10 V, 3 VNew
설명
유통업체에서 제공한 Infineon IPN50R1K4CEATMA1에 대한 설명입니다.
INFINEON IPN50R1K4CEATMA1 MOSFET Transistor, N Channel, 4.8 A, 500 V, 1.26 ohm, 13 V, 3 VNew
Infineon NMOS CoolMOS CE, Vds=550 V, 4.8 A, SOT-223, , 3
Cost-effective drop-in replacement for DPAK, PG-SOT223-4-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 4.8A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N-Ch, 500V, 4.8A, Sot-223-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:500V; On Resistance Rds(On):1.26Ohm; Rds(On) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies IPN50R1K4CEATMA1
Infineon is growing the portfolio of CoolMOS™ CE with the SOT-223 package as a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-223
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.8 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)500 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5 W
Min Breakdown Voltage500 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance1.4 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation5 W
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time23 ns
Turn-On Delay Time6.5 ns
Dimensions
Height1.8 mm