Infineon IPL65R095CFD7AUMA1

Power MOSFET, N Channel, 650 V, 29 A, 0.068 ohm, VSON, Surface Mount

Trans MOSFET N-CH 650V 29A 4-Pin VSON EP T/R

Power Field-Effect Transistor, 29A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Infineon NMOS, Vds=650 V, 29 A, ThinPAK 8 x 8, , 5

COOLMOS CFD7 SUPERJUNCTION MOSFE

Mosfet, N-Ch, 650V, 29A, Vson; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:29A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:-Rohs Compliant: Yes |Infineon Technologies IPL65R095CFD7AUMA1

Infineon’s 650V CoolMOS™ CFD7 superjunction MOSFET IPL65R095CFD7 in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. As a successor to the CFD2 SJ MOSFET family, it comes with reduced gate charge, improved turn-off behavior, and reduced reverse recovery charge enabling highest efficiency and power density as well as additional 50V breakdown voltage.