Infineon IPI90R1K2C3XKSA2

Transistor Power MOSFET N-CH 900V 5.1A 3-Pin PG-TO262

Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

MOSFET, N-CH, 900V, 5.1A, 150DEG C, 83W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.94ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:

MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:900V; Current, Id Cont:5.1A; On State Resistance:1.2ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-262;;RoHS Compliant: Yes

900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting