가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| QUARKTWIN TECHNOLOGY LTD | IPI80N06S3L-05 | 문의하기 | >1wk | |||||||||
| Klychip | IPI80N06S3L-05 | 문의하기 | 1 | >1wk | ||||||||
| North Star Micro | NS-IPI80N06S3L-05 | 문의하기 | 3d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-02-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-01-31
LTD Date2011-07-31
관련 부품
InfineonIPI040N06N3GXKSA1
OptiMOS™3 Power-Transistor Features for sync. rectification, drives and dc/dc SMPS
InfineonIPI80N04S404AKSA1
40V, N-Ch, 4.6 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T2, PG-TO262-3-3, RoHS
설명
유통업체에서 제공한 Infineon IPI80N06S3L-05에 대한 설명입니다.
80 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-262AA
Compliant Through Hole 41 ns Lead Free 49 ns 4.8 mΩ TO-262-3 80 A
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
TO262-3/AUTOMOTIVE MOS TRANSISTO
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance13.06 nF
Max Operating Temperature175 °C
Max Power Dissipation165 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation165 W
Rds On Max4.8 mΩ
Rise Time49 ns
Turn-Off Delay Time65 ns
Voltage Rating (DC)55 V