Infineon IPD80R3K3P7ATMA1

MOSFET N-CH 800V 1.9A TO252-3 / N-Channel 800 V 1.9A (Tc) 18W (Tc) Surface Mount PG-TO252-3

Power Field-Effect Transistor, 1.9A I(D), 800V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Mosfet, N-Ch, 800V, 1.9A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:800V; On Resistance Rds(On):2.8Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes |Infineon Technologies IPD80R3K3P7ATMA1

800V CoolMOS™ P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power.This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.