공급망
Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-08-15
Lifecycle StatusNRND (Last Updated: 1 week ago)
설명
유통업체에서 제공한 Infineon IPD65R660CFDATMA2에 대한 설명입니다.
Mosfet, N-Ch, 650V, 6A, To-252-3; |Infineon Technologies IPD65R660CFDATMA2
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO252-3, RoHS
Infineon SCT
650V, 6A, 66Ohm, N-Channel. DPAK, MOSFET
Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
63W(Tc) 20V 4.5V@ 200µA 22nC@ 10 V 1individualNChannel 700V 660mΩ@ 2.1A,10V 6A 615pF@100V TO-252-3 SMD mount
MOSFET N-CH 700V 6A TO252-3-313
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.
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기술 사양
Physical
Case/PackageTO-252
Number of Terminals2
Technical
Continuous Drain Current (ID)6 A
Drain to Source Resistance660 mΩ
Drain to Source Voltage (Vds)650 V
Max Operating Temperature150 °C
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance660 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation63 W