공급망
Country of OriginAustria, Germany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-06-12
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Infineon IPD60R600P7SAUMA1에 대한 설명입니다.
TRANSISTOR, MOSFET, 600V COOLMOS, P7 POWER, 7TH GEN, 650V, 600MOHM, 16A, TO252
MOSFET N-CH 600V 6A TO252-3 / N-Channel 600 V 6A (Tc) 30W (Tc) Surface Mount PG-TO252-3
Mosfet, n-Ch,600V,6A,30W, to-252,transistor Polarity-N Channel, continuous Drain Current Id-6A, drain Source Voltage Vds-600V, on Resistance Rdson-0.49Ohm, rdson Test Voltage Vgs-10V, threshold Voltage Vgs-3.5V, power Rohs Compliant: Yes |Infineon Technologies IPD60R600P7SAUMA1
The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Number of Terminals2
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)600 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Breakdown Voltage600 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance600 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation30 W
Schedule B8541290080
Turn-Off Delay Time37 ns
Turn-On Delay Time7 ns
Dimensions
Height2.55 mm