Infineon IPD60R180CM8XTMA1

N-Ch MOSFET 600V 18A 127W(Tc) 4.7V@140µA 17nC@10V 180mΩ@5.6A,10V 743pF@400V SMD

Trans MOSFET N-CH 600V 18A 3-Pin(2+Tab) DPAK T/R

N-Channel 600 V 18A (Tj) 127W (Tc) Surface Mount PG-TO252-3-313

Power Field-Effect Transistor, 18A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252

MOSFET, N-CH, 600V, 18A, TO-252;

The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.