가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | IPD50R520CPATMA1 | 0 | 1 | Cut Tape | 23h | |||||||
| Microchip USA | IPD50R520CP | 286 | 3K | 16h | ||||||||
| Component Stockers USA | IPD50R520CPATMA1 | 2,717 | >1wk | |||||||||
| Win Source | WS-IPD50R520CPATMA1 | 21,000 | 45 | 1d | ||||||||
| Worldway Electronics | IPD50R520CP | 16,807 | 7 | Tape & Reel | 1h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonSPD08N50C3ATMA1
Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK
InfineonSPD07N60C3ATMA1
SPD07N60C3 Series 650 V 0.6 Ohm 7.3 A CoolMOS Power Transistor - PG-TO-252
onsemiFDD6N50TM-WS
Mosfet Transistor, N Channel, 6 A, 500 V, 0.76 Ohm, 10 V, 5 V |Onsemi FDD6N50TM_WS
InfineonSPD04N60C3ATMA1
Power MOSFET, N Channel, 650 V, 4.5 A, 0.85 ohm, TO-252 (DPAK), Surface Mount
설명
유통업체에서 제공한 Infineon IPD50R520CPATMA1에 대한 설명입니다.
MOSFET Transistor, N Channel, 7.1 A, 550 V, 520 mohm, 10 V, 3 V
CoolMOSTM Power Transistor | MOSFET N-CH 550V 7.1A TO-252
Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7.1A; Drain Source Voltage Vds:550V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:7.1A; Package / Case:TO-252; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:550V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)7.1 A
Drain to Source Breakdown Voltage550 V
Drain to Source Resistance520 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage550 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance680 pF
Max Dual Supply Voltage500 V
Max Operating Temperature175 °C
Max Power Dissipation66 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance520 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation66 W
Rds On Max520 mΩ
Rise Time14 ns
TerminationSMD/SMT
Threshold Voltage3 V
Turn-Off Delay Time80 ns
Turn-On Delay Time35 ns
Dimensions
Height2.41 mm
Length6.73 mm
Width6.22 mm