공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-03-11
LTD Date2020-03-11
관련 부품
onsemiNTD110N02R
Tube Surface Mount N-Channel Single Mosfet Transistor 12.5A Ta 110A Tc 110A 2.88W 21ns
설명
유통업체에서 제공한 Infineon IPD040N03LGBTMA1에 대한 설명입니다.
Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.001uF 50 volts 10%
Compliant Surface Mount 6.22 mm 2.41 mm 6.73 mm 4 mΩ TO-252-3 3
Power Field-Effect Transistor, 89A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CH, 90A, 30V, PG-TO252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Po
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)89 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.9 nF
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max4 mΩ
Turn-Off Delay Time27 ns
Turn-On Delay Time7.4 ns
Dimensions
Height2.41 mm
Length6.73 mm
Width6.22 mm