공급망
Country of OriginAustria, Germany, Malaysia, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-05-11
Lifecycle StatusProduction (Last Updated: 1 month ago)
설명
유통업체에서 제공한 Infineon IPB65R190CFD에 대한 설명입니다.
MOSFET Transistor, N Channel, 17.5 A, 700 V, 0.171 ohm, 10 V, 4 V
Trans MOSFET N-CH 650V 17.5A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 650V 17.5A TO263
MOSFET N-Ch 650V 17.5A D2PAK-2 CoolMOS CFD2
151W 20V 68nC@10V 1 N-Ch 650V 190mΩ@10V 1.85nF@100V TO-263-3 SMD, Adhesive Mount 10mm × 9.25mm × 4.4mm
Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB65R190CFD Infineon Technologies
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263-3
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)17.5 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vds)55 V
Element ConfigurationSingle
Fall Time6.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.06 nF
Max Operating Temperature150 °C
Max Power Dissipation165 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation151 W
Rds On Max4.5 mΩ
Rise Time8.4 ns
Threshold Voltage4 V
Turn-Off Delay Time53.2 ns
Turn-On Delay Time12 ns
Dimensions
Height4.57 mm
Length10.31 mm
Width9.45 mm