공급망
Country of OriginGermany, Malaysia, Mexico
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-18
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Infineon IPB65R045C7ATMA2에 대한 설명입니다.
Power MOSFET, N Channel, 650 V, 46 A, 0.04 ohm, TO-263 (D2PAK), Surface Mount
MOSFET N-CH 650V 46A TO263-3 N-Channel 650 V 46A (Tc) 227W (Tc) Surface Mount PG-TO263-3
Trans MOSFET N-CH 650V 46A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 46A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 46A, 650V, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; P
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
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- Infineon Technologies
- INF
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- INFENION
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- INFIEON
- INFINEON TECH
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기술 사양
Physical
Case/PackageTO-263
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)46 A
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)650 V
Max Operating Temperature150 °C
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance45 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation227 W
Schedule B8541290080