가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IPB60R250CPATMA1 | 103,745 | 3h | |||||||||
| Microchip USA | IPB60R250CP | 185 | 300 | Bulk | 19h | |||||||
| Verical | IPB60R250CPATMA1 | 45,845 | 235 | |||||||||
| Win Source | WS-IPB60R250CP | 1,011 | 23 | 3h | ||||||||
| Worldway Electronics | IPB60R250CPATMA1 | 17,824 | 7 | Tape & Reel | 1h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-06-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-04-30
LTD Date2016-10-31
관련 부품
STMicroelectronicsSTB10N65K3
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in D2PAK package
STMicroelectronicsSTB13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in D2PAK package
설명
유통업체에서 제공한 Infineon IPB60R250CPATMA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 12A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-263; ;RoHS Compliant: Yes
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
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- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263-3
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)650 V
Dual Supply Voltage650 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation104 W
Rds On Max250 mΩ
Rise Time17 ns
TerminationSMD/SMT
Turn-Off Delay Time110 ns
Turn-On Delay Time40 ns
Dimensions
Height4.57 mm
Length10.31 mm
Width9.45 mm