유통업체에서 제공한 Infineon IPB60R040CFD7ATMA1에 대한 설명입니다.
Power MOSFET, N Channel, 600 V, 50 A, 0.031 ohm, TO-263 (D2PAK), Surface Mount
Transistor MOSFET N-CH 600V 50A 3-Pin TO-263 T/R
Avnet Japan
Trans MOSFET N-CH 600V 50A 3-Pin(2+Tab) D2PAK T/R
IPB60R040CFD7 Series 600 V 50 A 40 mOhm Single N-Channel MOSFET - TO-263-3
N-Channel 600 V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3-2
Infineon NChannel EnhancedMOSTube IPA60Rseries, Vds=650 V, 18 A, TO-220 FPencapsulation, Through hole mounting, 3Pin
MOSFET, N-CH, 600V, 50A, 150DEG C, 227W;
Power Field-Effect Transistor, 50A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET N-CH 650V 50A TO263-3-2
Infineon’s 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.