공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-03-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-12-01
LTD Date2017-06-01
관련 부품
InfineonAUIRFS3806
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonIRFZ44NSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;D2Pak;PD 94W;VGS +/-20
InfineonIRFZ46ZSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 10.9 Milliohms;ID 51A;D2Pak;PD 82W;VGS +/-20
onsemi2SJ661-DL-1E
Power MOSFET, P-Channel, -60V, -38A, 39mΩ P-Channel Power MOSFET, -60V, -38A, 39mOhm
설명
유통업체에서 제공한 Infineon IPB45N06S4-09에 대한 설명입니다.
60V, N-Ch, 9.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 45A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 45A I(D), 60V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.946308 g
Technical
Continuous Drain Current (ID)45 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance9.1 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.785 nF
Max Dual Supply Voltage60 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation71 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance9.1 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation71 W
Rds On Max9.1 mΩ
Rise Time40 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time15 ns
Dimensions
Height4.5 mm
Length10 mm
Width9.25 mm