공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-02-28
LTD Date2013-08-31
관련 부품
InfineonIPB090N06N3GATMA1
71W(Tc) 20V 4V@ 34¦ÌA 36nC@ 10 V 1N 60V 9m¦¸@ 50A,10V 50A 2.9nF@30V TO-263 10.31mm*4.57mm
onsemiIRFW530ATM
Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
설명
유통업체에서 제공한 Infineon IPB075N04LG에 대한 설명입니다.
Trans MOSFET N-CH 40V 50A 3-Pin(2+Tab) TO-263
Power Field-Effect Transistor, 50A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
MOSFET, N CH, 50A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:56W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
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기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time3.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.8 nF
Max Operating Temperature175 °C
Max Power Dissipation56 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation56 W
Rds On Max7.5 mΩ
Rise Time3.4 ns
Turn-Off Delay Time22 ns
Turn-On Delay Time5.7 ns