Infineon IPB073N15N5ATMA1

Mosfet, N-Ch, 150V, 114A, To-263 Rohs Compliant: Yes |Infineon Technologies IPB073N15N5ATMA1

Trans MOSFET N-CH 150V 114A 3-Pin(2+Tab) D2PAK T/R

Power Field-Effect Transistor, 114A I(D), 150V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

MOSFET, N-CH, 150V, 114A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:114A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.8

OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The products offer a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.