Infineon IPB040N08NF2SATMA1
$ 0.795
Production
가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IPB040N08NF2SATMA1 | 800 | 1 | 2d | ||||||||
| Newark | IPB040N08NF2SATMA1 | 702 | 1 | Cut Tape | ||||||||
| Future Electronics | IPB040N08NF2SATMA1 | 800 | 800 | Tape & Reel | ||||||||
| Rochester Electronics | IPB040N08NF2SATMA1 | 25,100 | 23h | |||||||||
| DigiKey | 448-IPB040N08NF2SATMA1CT-ND | 760 | 1 | Cut Tape |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2022-09-23
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Infineon IPB040N08NF2SATMA1에 대한 설명입니다.
Power MOSFET, N Channel, 80 V, 107 A, 0.0035 ohm, TO-263 (D2PAK), Surface Mount
Mosfet, N-Ch, 80V, 107A, To-263 Rohs Compliant: Yes |Infineon Technologies IPB040N08NF2SATMA1
Power Field-Effect Transistor, 107A I(D), 80V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 4 mOhm, addressing a broad range of applications from low- to high-switching frequency.
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